Small Signal Transistors NPN - Low VCE(SAT) Transistor Chip
Description
PROCESS
Small Signal Transistors
CP341V
NPN - Low VCE(SAT) Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 54,330 PRINCIPAL DEVICE TYPES CMLT3410 CMPT3410 CMST3410 CMUT3410 CXT3410 EPITAXIAL PLANAR 18 x 18 MILS 7....
