CMSSH-3E CMSSH-3AE
CMSSH-3CE CMSSH-3SE
w w w. c e n t r a l s e m i . c o m
ENHANCED SPECIFICATION SURFACE MOUNT SILIC...
CMSSH-3E CMSSH-3AE
CMSSH-3CE CMSSH-3SE
w w w. c e n t r a l s e m i . c o m
ENHANCED SPECIFICATION SURFACE MOUNT SILICON
SCHOTTKY DIODES
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3E Series types are Enhanced Versions of the CMSSH-3 Series of Silicon
Schottky Diodes in an SOT-323 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100mA max to 200mA MAX
SOT-323 CASE CMSSH-3E: CMSSH-3AE: CMSSH-3CE: CMSSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES
♦ ♦
BVR from 30V min to 40V MIN VF from 1.0V max to 0.8V MAX CODE: CODE: CODE: CODE: 31E 3AE 3CE 3SE
UNITS 40 200 350 750 250 -65 to +150 500 V mA mA mA mW °C °C/W
MARKING MARKING MARKING MARKING
SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA
♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current
Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
MAXIMUM RATINGS: (TA=25°C)
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=25V VR=25V, TA=100°C IR=100µA IF=2.0mA IF=15mA IF=100mA IF=200mA VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100Ω 40 90 25 50 0.29 0.37 0.61 0.65 7.0 5.0 0.33 0.42 0.80 1.0 500 100 IR
UNITS nA μA V V V V V pF ns
♦BVR ♦VF ♦VF ♦♦VF
CT trr VF
♦ Enhanced specification ♦♦ Additional Enhanced specification
R2 (9-February 2010)
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CMSSH-3E CMSSH-3AE
CMSSH-3CE CMSSH-3SE
ENHANCED SPECIFICATION ...