SIA921EDJ

SiA921EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.059 at VGS = - 4.5 V 0.098 at VGS = - 2.5 V ID (A) - 4.5a - 4.5a Qg (Typ.) 4.9 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Typical ESD Protection: 1700 V High Speed Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6 Dual Load Switch, PA Switch and Battery Switch for Portable Devices S1 S2 DC/DC Converters Marking Code 1 S1 2 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 2.05 mm 3 D2 DFX Part # code XXX Lot Traceability and Date code G1 G2 D1 D2 P-Channel MOSFET Ordering Information: SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 4.5a - 4.5a - 4.5a, b, c - 3.7b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter www.DataSheet...