SI4190DY

New Product Si4190DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.0088 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)a 20 17 Qg (Typ.) 18.3 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4190DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D G D DC/DC Primary Side Switch Telecom/Server Industrial D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 100 ± 20 20 16 13.4b, c 10.6b, c 70 7.0 3.1b, c 30 45 7.8 5.0 3.5b, c 2.2b, c - 55 to 150 °C W mJ A Unit V www.DataSheet4U.com Parameter THERMAL RESISTANCE RATINGS Symbol b, d Typical 29 13 Maximum 35 16 Unit °C/W Maximum Junction-to-Ambient t  10 s RthJA RthJF Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state condi...