CMPDM8002A

CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802A FEATURES: Low rDS(ON) Low VDS(ON) Low threshold voltage Fast switching Logic level compatibility SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN 50 50 20 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.0 500 UNITS V V V mA mA A A mW °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω SOT-23 CASE APPLICATIONS: Load/Power switches Power supply converter circuits Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=50V, VGS=0 IDSS VDS=50V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA VSD VGS=0, IS=115mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, TJ=125°C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C 500 50 1.0 2.5 1.5 0.15 1...