CMPD7000E

CMPD7000E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD7000E is an Enhanced version of the CMPD7000 Dual, Series Configuration, Ultra-High Speed Switching Diode. This device is manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. MARKING CODE: C5CE SOT-23 CASE FEATURED ENHANCED SPECIFICATIONS: ♦ BVR from 100V min to 120V min. ♦ ♦ Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25 °C) VF from 1.1V max to 1.0V max. UNITS V mA mA mW °C °C/W SYMBOL VRRM IO IFM PD TJ, Tstg ΘJA 120 200 500 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=50V 300 IR VR=50V, TA=125°C 100 IR VR=100V 500 IR=100µA 120 150 ♦ BVR IF=1.0mA 0.55 0.59 0.65 ♦ VF ♦ VF IF=10mA 0.67 0.72 0.77 ♦ VF IF=100mA 0.85 0.91 1.0 CT VR=0, f=1.0MHz 1.5 2.6 trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 2.0 4.0 ♦ Enhanced Specification UNITS nA μA nA V V V V pF ns R4 (27-January 2010) www.DataSheet4U.com CMPD7000E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING ...