KRLML6402

SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 (KRLML6402) ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(＜1.1mm). ● Available in tape and reel. ● Fast switching. +2.4 0.1 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.38 0.1 -0.1 +0.97 0.1 -0.1 +0.11.3 - 0 .1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolraleicntor ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=4.5V @ TA=25℃ Continuous Drain Current VGS=4.5V@ TA=70℃ Pulsed Drain Current a Power Dissipation @ TA=25℃ Power Dissipation @ TA=70℃ Single Pulse Avalanche Energy b Thermal Resistance.Junction- to-Ambient Linera Derating Factor Junction Temperature Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD EAS RthJA TJ Tstg Rating -20 ±12 -3.7 -2.2 -30 1.3 0.8 11 100 0.01 150 -55 to 150 Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b.Starting TJ=25℃, L=1.65mH, RG=25Ω, IAS=-3.7A Unit V A W mJ ℃/W W/℃ ℃ www.kexin.com.cn 1 SMD Type MOSFET P-Channel Enhancement MOSFET I RLML6402 (KRLML6402) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Drain-source Breakdown voltage VDSS ID V = 0V Zero Gate Voltage Drain Current ce leadage e IDSS I V VDS = -20 V, V VDS = -20 V, V V =±12V VDS = V , ID = 0V = 0V, TJ ℃ Static drain-source on- resist...