CoolMOS® Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High ...
CoolMOS® Power
Transistor
Features Lowest figure-of-merit RONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ
IPA60R199CP
650 V 0.199 Ω
32 nC
PG-TO220
CoolMOS CP is designed for: Hard switching SMPS topologies
Type IPA60R199CP
Package PG-TO220
Marking 6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current2)
Pulsed drain current3) Avalanche energy, single pulse
Symbol Conditions I D T C=25 °C
T C=100 °C I D,pulse T C=25 °C E AS I D=6.6 A, V DD=50 V
Avalanche
energy,
repetitive
t
3),4) AR
E AR
I D=6.6 A, V DD=50 V
Avalanche
current,
repetitive
t
3),4) AR
I AR
MOSFET dv /dt ruggedness
dv /dt V DS=0...480 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M2.5 screws
Rev. 2.2 Rev. 2.3
page 1 Page 1
Value 16 10 51 436
0.66
6.6
50 ±20 ±30 34 -55 ... 150 50
Unit A
mJ
A V/ns V
W °C Ncm
2011-12-20 2018-02-14
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current2) Diode pulse current3) Reverse diode dv /dt 5)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
IPA60R199CP
Value 16 51 15
Unit A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, ju...