IPA100N08N3G

IPA100N08N3 G OptiMOS(TM)3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Type IPA100N08N3 G Product Summary V DS R DS(on),max ID 80 10 40 V mΩ A Package Marking PG-TO220-FP 100N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 www.DataSheet4U.com 1) 2) Value 40 30 160 110 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=40 A, R GS=25 Ω mJ V W °C T C=25 °C 35 -55 ... 175 55/175/56 J-STD20 and JESD22 Current is limited by package; with an RthJC=1.5 K/W in a standard TO-220 package the chip is able to carry 72A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.0 page 1 2008-11-21 IPA100N08N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 4.3 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Sta...