L011

Fast Recovery Epitaxial Diode (FRED) Module VRSM V 200 VRRM V 200 MEO 550-02DA Type MEO 550-02 DA VRRM = 200 V IFAVM = 582 A trr = 150 ns 3 1 1 3 Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 822 582 2880 4800 5280 4320 4750 115200 117100 93300 94800 -40...+150 -40...+125 110 A A A A A A A As A2s A2s A2s °C °C °C W V~ V~ 2 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine It 2 TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg TSmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 300 A; IF = 520 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM TVJ TVJ TVJ TVJ = 125°C = 25°C = 125°C = 25°C TC = 25°C 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Mounting torque (M6) Terminal connection torque (M6) Creep distance on surface Strike distance through air Maximum allowable acceleration 1750 3000 3600 Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuit...