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WTK4224 Dataheets PDF



Part Number WTK4224
Manufacturers Weitron Technology
Logo Weitron Technology
Description Surface Mount Dual N-Channel Enhancement Mode POWER MOSFET
Datasheet WTK4224 DatasheetWTK4224 Datasheet (PDF)

WTK4224 Surface Mount Dual N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 10 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE D1 S1 G1 S2 G2 1 2 3 8 7 6 D1 D2 D2 Features: *Super high dense cell design for low RDS(ON) RDS(ON)<14mΩ @VGS = 10V RDS(ON)<20mΩ @VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) (TA =25˚C) (TA =70˚C) Pulse.

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WTK4224 Surface Mount Dual N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 10 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE D1 S1 G1 S2 G2 1 2 3 8 7 6 D1 D2 D2 Features: *Super high dense cell design for low RDS(ON) RDS(ON)<14mΩ @VGS = 10V RDS(ON)<20mΩ @VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) (TA =25˚C) (TA =70˚C) Pulsed Drain Current (2) Power Dissipation (1) (TA =25˚C) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD R θJA TJ, Tstg Value 30 Unite V V A A W C/W C 4 5 1 SO-8 + 20 10 8 30 2 62.5 -55 to 150 www.DataSheet4U.com Device Marking WTK4224=4224SS WEITRON http://www.weitron.com.tw 1/5 07-Apr-10 WTK4224 Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 30 1.0 Typ. 0.03 16 23 6 14 12 8 34 16 1910 400 280 0.9 Max. 3.0 100 1 25 14 20 15 3070 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=10A VGS= 20V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=10A VGS=4.5V, ID=7A ID=10A VDS=24V VGS=4.5V VDS=15V ID=1A VGS=10V RG=3.3 RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge 2 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Parameter Forward On Voltage2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. - Typ. 30 24 Max. 1.2 - Unit V ns nC Test Conditions IS=1.7A, VGS=0V, Tj=25 IS=10A, VGS=0V dI/dt=100A/ s Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. www.DataSheet4U.com 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. WEITRON http://www.weitron.com.tw 2/5 07-Apr-10 WTK4224 Characteristics Curve WE IT R ON Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature www.DataSheet4U.com Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/5 07-Apr-10 WEITRON http://www.weitron.com.tw WTK4224 WE IT R ON Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance www.DataSheet4U.com Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform WEITRON http://www.weitron.com.tw 4/5 07-Apr-10 WTK4224 SO-8 Package Outline Dimensions Unit:mm 1 L θ E1 D 7 (4X) A C 7(4X) 2A A1 e B eB SYMBOLS MILLIMETERS MAX MIN A A1 B C D E1 eB e L θ 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8 www.DataSheet4U.com WEITRON http://www.weitron.com.tw 5/5 07-Apr-10 .


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