N-Channel Enhancement Mode Power MOSFET
WTC2302
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 2.3 AMPERES DRAIN SOUCE ...
Description
WTC2302
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 2.3 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
2
SOURCE
3 1 2
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1, 2 Total Power Dissipation (TA =25°C ) Maximum Junction-ambient 3 (T A
Unless Otherwise Specified) Symbol
V DS VG S ID IDM PD R θJA T J , T s tg
Value
20 ±8 2.3 8 0.9 145 -55~+150
Unit
V A A W °C /W °C
Operating Junction and Storage Temperature Range
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Device Marking
WTC2302 = N02
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1/6
Rev.B 24-Aug-09
WTC2302
Electrical Characteristics (TA = 25℃
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS=0,ID=-10μA Gate-Source Threshold Voltage VDS=VGS,ID=250μA Gate-Source Leakage Current VGS= ±8V Drain-Source Leakage Current(Tj=25℃) VDS=9.6V,VGS=0 Drain-Source On-Resistance VGS=4.5V,ID=2.8A VGS=2.5V,ID=2.0A Forward Transconductance VDS=5V,ID=4.0A gfs RDS(on) 40 50 6.5 60 115 mΩ V(BR)DSS VGS(Th) IGSS IDSS 20 0.6 V 1.2 ±100 nA
-
-
-1
μA
S
Dynamic
Input Capacitance VGS=0V,VDS=6V,f=1.0MHz Output Capacitance VGS=0V,VDS=6V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=6V,f=1.0MHz Ciss Coss Crss 427.12 80.56 57 pF
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