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MUN5311DW Dataheets PDF



Part Number MUN5311DW
Manufacturers Weitron Technology
Logo Weitron Technology
Description Dual Bias Resistor Transistor NPN+PNP Silicon
Datasheet MUN5311DW DatasheetMUN5311DW Datasheet (PDF)

MUN5311DW Series Dual Bias Resistor Transistor NPN+PNP Silicon P b Lead(Pb)-Free 1 6 5 4 Q2 R2 R1 2 R1 6 5 R2 4 Q1 3 1 2 3 SOT-363(SC-88) Maximum Ratings ( TA=25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value 50 50 100 Unit Vdc Vdc mAdc Thermal Characteristics Characteristics(One Junction Heated) Total Device Dissipation TA=25˚C Derate ab.

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MUN5311DW Series Dual Bias Resistor Transistor NPN+PNP Silicon P b Lead(Pb)-Free 1 6 5 4 Q2 R2 R1 2 R1 6 5 R2 4 Q1 3 1 2 3 SOT-363(SC-88) Maximum Ratings ( TA=25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value 50 50 100 Unit Vdc Vdc mAdc Thermal Characteristics Characteristics(One Junction Heated) Total Device Dissipation TA=25˚C Derate above 25˚C Thermal Resistance, Junction to Ambient Symbol PD Max 187(1) 256(2) 1.5(1) 2.0(2) 670(1) 490(2) Unit mW mW/˚C ˚C/W RθJA Characteristics(Both Junctions Heated) Total Device Dissipation TA=25˚C Derate above 25˚C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Junction and Storage, Temperature Range 1.FR-4 @ minimum pad. 2.FR-4 @ 1.0 x 1.0 inch Pad Symbol PD Max 250(1) 385(2) 2.0(1) 3.0(2) 493(1) 325(2) 188(1) 208(2) -55 to +150 Unit mW mW/ C ˚C/W ˚C/W ˚C RθJA RθJL TJ,Tstg Device Marking and Resistor Values Device MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW Marking 11 12 13 14 15 16 R1(K) 10 22 47 10 10 4.7 R2(K) 10 22 47 47 8 8 Device MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW Marking 30 31 32 33 34 35 R1(K) 1.0 2.2 4.7 4.7 22 2.2 R2(K) 1.0 2.2 4.7 47 47 47 MUN5311DW www.DataSheet4U.com WE I TR O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/29 Rev.B 20-Jan-09 MUN5311DW Series Electrical Characteristics (TA=25 C Unless Otherwise noted) WEITRON Symbol Min Typ Max Unit Characteristics Off Characteristics Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Emitter Breakdown Voltage3 (IC=2.0mA, IB =0) Collector-Base Cutoff Voltage (VCB=50 V, IE =0) Collector-Emitter Cutoff Current (VCE=50V, IB=0) Emitter-Base Cutoff Current (VEB=6.0V, IC=0) V(BR)CBO V(BR)CEO ICBO ICEO MUN5311DW MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 V V nA nA mA On Characteristics3 Collector-Emitter Saturation Voltage (IC =10mA, IB =0.3mA) (IC =10mA, I B =5mA) MUN5330DW/MUN5331DW (IC =10mA, IB =1mA) MUN5315DW/MUN5316DW MUN5332DW/MUN5333DW/MUN5334DW 3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% VCE(sat) 0.25 Vdc www.DataSheet4U.com WEITRON http://www.weitron.com.tw 2/29 Rev.A 29-Dec-05 MUN5311DW Series Electrical Characteristics (TA=25 C Unless Otherwise noted, common for Q1 and Q2, -minus sign for Q1(PNP) omitted) (Continued) WEITRON Symbol Min Typ Max Unit Characteristics On Characteristics3 DC Current Gain (VCE=-10V, IC =5.0mA) MUN5311DW MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW MUN5311DW MUN5312DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW MUN5313DW h FE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 4.9 60 100 140 140 350 350 5.0 15 3.


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