Document
MUN5311DW Series Dual Bias Resistor Transistor NPN+PNP Silicon
P b Lead(Pb)-Free
1 6 5 4
Q2
R2 R1
2
R1
6 5
R2
4
Q1
3
1
2
3
SOT-363(SC-88)
Maximum Ratings ( TA=25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted)
Rating
Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous
Symbol
VCEO VCBO IC
Value
50 50 100
Unit
Vdc Vdc mAdc
Thermal Characteristics
Characteristics(One Junction Heated)
Total Device Dissipation TA=25˚C Derate above 25˚C Thermal Resistance, Junction to Ambient
Symbol
PD
Max
187(1) 256(2) 1.5(1) 2.0(2) 670(1) 490(2)
Unit
mW mW/˚C ˚C/W
RθJA
Characteristics(Both Junctions Heated)
Total Device Dissipation TA=25˚C Derate above 25˚C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Junction and Storage, Temperature Range 1.FR-4 @ minimum pad. 2.FR-4 @ 1.0 x 1.0 inch Pad
Symbol
PD
Max
250(1) 385(2) 2.0(1) 3.0(2) 493(1) 325(2) 188(1) 208(2) -55 to +150
Unit
mW mW/ C ˚C/W ˚C/W ˚C
RθJA RθJL TJ,Tstg
Device Marking and Resistor Values
Device
MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW
Marking
11 12 13 14 15 16
R1(K)
10 22 47 10 10 4.7
R2(K)
10 22 47 47 8 8
Device
MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW
Marking
30 31 32 33 34 35
R1(K)
1.0 2.2 4.7 4.7 22 2.2
R2(K)
1.0 2.2 4.7 47 47 47
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1/29
Rev.B 20-Jan-09
MUN5311DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
WEITRON
Symbol Min Typ Max Unit
Characteristics
Off Characteristics
Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Emitter Breakdown Voltage3 (IC=2.0mA, IB =0) Collector-Base Cutoff Voltage (VCB=50 V, IE =0) Collector-Emitter Cutoff Current (VCE=50V, IB=0) Emitter-Base Cutoff Current (VEB=6.0V, IC=0) V(BR)CBO V(BR)CEO ICBO ICEO MUN5311DW MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 V V nA nA mA
On Characteristics3
Collector-Emitter Saturation Voltage (IC =10mA, IB =0.3mA) (IC =10mA, I B =5mA) MUN5330DW/MUN5331DW (IC =10mA, IB =1mA) MUN5315DW/MUN5316DW MUN5332DW/MUN5333DW/MUN5334DW 3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% VCE(sat) 0.25 Vdc
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Rev.A 29-Dec-05
MUN5311DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted, common for Q1 and Q2, -minus sign for Q1(PNP) omitted) (Continued)
WEITRON
Symbol Min Typ Max Unit
Characteristics
On Characteristics3
DC Current Gain (VCE=-10V, IC =5.0mA) MUN5311DW MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW MUN5311DW MUN5312DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW MUN5313DW h FE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 4.9 60 100 140 140 350 350 5.0 15 3.