ZXTN5551G

ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 2W Complementary part number ZXTP5401G Description A high voltage NPN transistor in a high power dissipation surface mount package C Features 160V rating SOT223 package B E Applications High voltage amplification E C Tape width (mm) 12 12 Quantity per reel 1000 4000 Ordering information Device ZXTN5551GTA ZXTN5551GTC Reel size (inches) 7 13 C B Pinout - top view Device marking ZXTN 5551 www.DataSheet4U.com Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTN5551G Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Power dissipation at TA = 25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC PD Limit 180 160 6 600 2 16 -55 to 150 Unit V V V mA W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Value 62.5 Unit °C/W NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. www.DataSheet4U.com Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTN5551G Characteristics www.DataSheet4U.com Issue 1 - August 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXTN5551G Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. 180 ...