Document
ZXSBMR16PT8
SCHOTTKY BRIDGE RECTIFIER PLUS FREEWHEEL DIODE
Product Summary
• Schottky Bridge and Freewheel diode for use in MR16 LED Drive
• Internal Ambient Temperature = 90°C MAX within MR16 circuit enclosure
• VR = 13.2VRMS • IF = 0.4AAVG • IR = 10μA
Description and Applications
This low leakage Schottky bridge and freewheel diode have been specifically designed for the MR16 LED driver solution alongside ZXLD1350E5 as described in Design Note DN86.
Features and Benefits
• Compact surface mount solution and reduced component count in MR16 LED drive circuit
• Optimized bridge and freewheel diode for use in MR16 LED diode circuitry
• Low VF and low reverse leakage current • Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SM-8 • Case Material: TBD • Moisture Sensitivity: TBD • Terminals: TBD • Weight: TBD grams (approximate)
SM-8
Top View
Device Circuit
Ordering Information (Note 1)
Notes:
Device ZXSBMR16PT8TA
Packaging SM-8
1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
Top View Pin-Out
Shipping 1000/Tape & Reel
ZXMB MR16P
ZXSBMR16P = Product Type Marking Code
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
1 of 6 www.diodes.com
February 2011
© Diodes Incorporated
ZXSBMR16PT8
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage Average Rectified Forward Current (Notes 2 & 3) Peak Repetitive Forward Current
Non Repetitive Forward Current
t ≤ 100μs t ≤ 10ms
Symbol VRRM VRMS IF(AV) IFPK
IFSM
Value 40 13.2 0.4 3.5 13 3.5
Units V V A A A A
Thermal Characteristics
Characteristic Power Dissipation, TA = 25°C (Note 2)
Symbol PD
Value 1
Unit W
Thermal Resistance, Junction to Ambient (Note 2)
RθJA 125 °C/W
Junction Temperature, Forward Dissipation Only Junction Temperature, Reverse Dissipation (Notes 2, 3, & 4) Storage Temperature Range MR16 LED Internal Ambient Temperature (Note 4)
TJ TJ TSTG TA
150 125 -55 to +150 90
°C °C °C °C
Notes:
2. For a bridge mounted on1.6mm FR4 PCB with minimum copper pads and track dimensions in still air. 3. Supply 12V RMS with capacitive bridge load. 4. Maximum bridge operating junction temperature must be reduced with increased reverse bias voltage to maintain unconditional thermal stability. 5. Refer to Design Note DN86
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
2 of 6 www.diodes.com
February 2011
© Diodes Incorporated
ZXSBMR16PT8
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Reverse Breakdown Voltage
Forward Voltage (Note 4)
Reverse Current Diode Capacitance
Symbol V(BR)R
VF
IR CD
Min 40 -
Typ -
305 355 405 485 570 640 415
6 370 16
Reverse Recovery Time
trr -
3
Reverse Recovery Charge
Qrr - 210
Notes: 4. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
Max -
360 410 470 550 660 750
10 -
-
-
Unit V
mV
μA pF ns pC
Test Condition IR = 200μA IF = 50mA IF = 100mA IF = 250mA IF = 500mA IF = 750mA IF = 1A IF = 500mA, TA = 100°C VR = 30V VR = 30V, TA = 85°C f = 1MHz, VR = 30V Switched from IF = 100mA to IR = 100mA Measured @ IR = 10mA di/dt = 500mA/ns. Rsource = 6Ω; Rload = 10Ω
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
3 of 6 www.diodes.com
February 2011
© Diodes Incorporated
ZXSBMR16PT8
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
4 of 6 www.diodes.com
February 2011
© Diodes Incorporated
ZXSBMR16PT8
Package Outline Dimensions
b D
E E1
A A1
e e1
15° 45°
c L
Suggested Pad Layout
SM-8
Dim Min Max Typ
A − 1.7 −
A1 0.02 0.1
−
b − 0.7 −
c 0.24 0.32 −
D 6.3 6.7
−
e − − 1.53
e1 −
− 4.59
E 6.7 7.3
−
E1 3.3 3.7
−
L 0.9 −
−
All Dimensions in mm
Y (8x) C1 Y1
X (8x) C
Dimensions C C1 X Y Y1
Value (in mm) 1.52 4.6 0.95 2.80 6.80
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
5 of 6 www.diodes.com
February 2011
© Diodes Incorporated
ZXSBMR16PT8
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