N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 57A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED73A3G/CEU73A3G
PRELIMINARY
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SE...
