N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 25A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED540L/CEU540L
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-...
