P-Channel Enhancement Mode Field Effect Transistor FEATURES
-100V, -8A, RDS(ON) = 350mΩ @VGS = -10V.
CED10P10/CEU10P10
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAX...