CED01N6G

N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N6G/CEU01N6G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 600 Units V V A A W W/ C C ±30 1 4 31 0.25 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Symbol RθJC RθJA Limit 3.5 50 Units C/W C/W www.DataSheet4U.com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . 1 Rev 1. 2009.Jul. http://www.cetsemi.com CED01N6G/CEU01N6G Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Curren...