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CEU01N65A Dataheets PDF



Part Number CEU01N65A
Manufacturers Chino-Excel Technology
Logo Chino-Excel Technology
Description N-Channel MOSFET
Datasheet CEU01N65A DatasheetCEU01N65A Datasheet (PDF)

N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N65A/CEU01N65A D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise n.

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N65A/CEU01N65A D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 650 Units V V A A W W/ C C ±30 0.9 3.6 43 0.35 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units C/W C/W www.DataSheet4U.com Details are subject to change without notice . 1 Rev 1. 2010.Mar http://www.cetsemi.com CED01N65A/CEU01N65A Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.8A VDS = 480V, ID = 0.8A, VGS = 10V VDD = 300V, ID = 0.4A, VGS = 10V,RGEN = 4.7Ω 10 11 21 42 10 0.7 7 0.8 1.5 20 22 42 84 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 10V, ID = 0.4A VDS = 25V, VGS = 0V, f = 1.0 MHz 1 165 60 30 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 0.4A 2 12 4 15 V Ω BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 650 1 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Device Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. www.DataSheet4U.com 2 CED01N65A/CEU01N65A 1.5 VGS=10,9,8V 1.2 0.9 0.6 0.3 0.0 1.5 25 C 1.2 0.9 0.6 0.3 TJ=125 C 25 0.0 1 2 3 4 5 -55 C 6 7 ID, Drain Current (A) VGS=6V VGS=5V 0 5 10 15 20 ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 300 250 200 150 100 50 0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=0.6A VGS=10V Ciss Coss Crss 0 5 10 15 20 25 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capac.


CED01N65 CEU01N65A CED01N65A


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