P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -3.5A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package.
CET6861
D
D G SOT-223 D
S
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Volt...
