N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 4.2A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package.
CES2324
D
D G SOT-23
G
S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain ...
