P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 86mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package.
CES2313A
D
D G SOT-23
G
S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Dr...
