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CES2310

Chino-Excel Technology
Part Number CES2310
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = ...
Datasheet PDF File CES2310 PDF File

CES2310
CES2310

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.
8A, RDS(ON) = 34mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.
5V.
RDS(ON) = 60mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
G S G SOT-23 CES2310 D D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±12 4.
8 20 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol R...


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