CES2309
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -2.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D PRELIMINARY
G
D G SOT-23 S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source...
