HTT1213E

HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 (Previous ADE-208-1449(Z)) Rev.1.00 Feb.07.2005 Features Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Q2: Equivalent Buffer Transistor Equivalent OSC Transistor 2SC5700 2SC5700 Outline PXSF0006LA-A (Previous code: EMFPAK-6) 6 54 Pin Arrangement B1 6 E2 5 B2 4 Q1 Q2 Note: Marking is “E”. 1 23 C1 1 E1 2 C2 3 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1 Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature *Value on PCB. (FR–4(13 x 13 x 0.635 mm)) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings Q1 and Q2 15 4 1.5 50 Total 200* 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.1.00, Feb.07.2005, page 1 of 3 HTT1213E Electrical Characteristics (Q1 and Q2) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol Min V(BR)CBO 15 ICBO ICEO IEBO hFE Cre    100  fT 10 |S21|2 13 NF  Typ     130 0.30 12 16 1.0 Max  0.1 1 0.1 150 0.45   1.7 (Ta = 25°C) Unit Test conditions V IC = 10 µA, IE = 0 µA µA µA  pF GHz dB dB VCB = 15 V, IE = 0 VCE = 4 V, RBE = infinite VE...