HTT1115S

HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C(Z) Rev.3 Aug. 2001 Features Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor 2SC5757 Outline SMFPAK-6 Pin Arrangement B1 6 Q1 E2 5 Q2 B2 4 6 5 4 1 2 3 Index band C1 1 1. Collector Q1 2. Emitter Q1 3. Collector Q2 E1 2 C2 3 www.DataSheet4U.com Note: Marking is “EK1”. 4. Base Q2 5. Emitter Q2 6. Base Q1 HTT1115S Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 150 –55 to +150 Q1 15 4 1.5 50 Q2 10 3.5 1.5 80 Total 220* 150 –55 to +150 Unit V V V mA mW °C °C *Value on PCB. (FR–4(13 x 13 x 0.635 mm)) Electrical Characteristics (Q1) (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre fT |S21| NF 2 Min 15    100  10 13  Typ     130  13 16 1.0 Max  0.1 1 0.2 170 0.45   2.0 Unit V µA µA µA  pF GHz dB dB Test Condition IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz, Emitter g...