TIC226M

SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and high-voltage applications Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Value A VDRM Symbol Ratings B C Unit M S N V A A A A W W °C °C °C D E Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Full-cycle RMS on-state current at (or 8 IT(RMS) below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave 70 ITSM (see Note3) Peak on-state surge current half-sine-wave 8 ITSM (see Note4) Peak gate current ±1 IGM Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) www.DataSheet4U.com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1.6 mm from case for 10 230 TL seconds Page 1 of 3 SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Notes: 1. 2. 3. 4. 5. These values apply bidirectionally for any value of resistance between the gate and Main ...