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HY5S5B6GLF-H

Hynix Semiconductor

256Mbit (16Mx16bit) Mobile SDR Memory


Description
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0...



Hynix Semiconductor

HY5S5B6GLF-H

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