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HY5S2B6DLF-BE

Hynix Semiconductor
Part Number HY5S2B6DLF-BE
Manufacturer Hynix Semiconductor
Description 4Banks x 2M x 16bits Synchronous DRAM
Published Mar 2, 2011
Detailed Description HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision His...
Datasheet PDF File HY5S2B6DLF-BE PDF File

HY5S2B6DLF-BE
HY5S2B6DLF-BE

Overview
HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.
0.
1 0.
2 0.
3 History Initial Draft Deleted Preliminary Changed Operation Voltage : 1.
65(min) -> 1.
70(min) Draft Date Dec.
2003 May.
2004 Feb.
2005 Remark Preliminary This document is a general product description and is subject to change without notice.
Hynix Semiconductor does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
0.
3 / Feb.
2005 1 1HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix Mobile SDR is suited for non-PC application which use the batteries such as PDAs, 2.
5G a...


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