HIGH POWER OPERATIONAL AMPLIFIER
)*()108&301&3"5*0/"-".1-*'*&3
CPA241
M I C R O T E C H N O L O G Y
)551888"1&9.*$305&$)$0.
"1&9...
Description
)*()108&301&3"5*0/"-".1-*'*&3
CPA241
M I C R O T E C H N O L O G Y
)551888"1&9.*$305&$)$0.
"1&9
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +VS to –VS OUTPUT CURRENT, continuous INPUT VOLTAGE, differential INPUT VOLTAGE, common mode TEMPERATURE, junction
350V 60mA ±16V ±VS 150°C
NOTE:
Refer to parent product data sheet PA241 for typical AC electrical characteristics, precautions, applications and other test parameters.
DC WAFER PROBED SPECIFICATIONS
PARAMETER TEST CONDITIONS1 MIN TYP MAX UNITS mV pA dB V mA OFFSET VOLTAGE, initial VS = ±50V BIAS CURRENT, initial COMMON MODE REJECTION VCM = ±90 V DC 84 VOLTAGE SWING IO = 40mA ±VS–12 SUPPLY CURRENT, quiescent VS = ±50 V 1.8 15 40 56 200 94 ±VS–10 2.1 2.3
NOTES: 1. Unless otherwise stated VS = ±50 V, TA = 25°C, DC input specification ± value given. 2. Sample tested by wafer to 95%.
TYPICAL EXTERNAL CONNECTIONS
74 3* 7*/ m74 3'
DIE LAYOUT
3$3-
$$
* Required component and value if given. Optional balance components are recommended values. CC is NPO, rated for full supply voltage –VS to +VS. NOTE: Diagram for connection illustration only. All op amp configurations are possible. Pad Function 1 Output 2 Compensation 3 Compensation www.DataSheet4U.com 4 Current Limit Pad 5 6 8 9 Function +Vs -Vs +IN -IN
Dimension: 154.5 x 117.5 ± 2.5 Mils. Thickness: 15 Mil (3...
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