PJU1N80

PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB/TO-251 TO-220AB TO -251 3 23 12 D S 1 G G 1 D 2 2 S 3 3 MECHANICAL DATA Case: TO-220AB / TO-251 Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERINGINFORMATION TYPE PJP1N80 PJU1N80 MARKING P1N80 U1N80 PACKAGE TO-220AB TO-251 PACKING 50PCS/TUBE 80PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng fa c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 1 N8 0 800 +3 0 1 4 45 0 .3 6 P J U1 N8 0 Uni ts V V 1 4 31 0 .2 5 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 9 .8 2 .7 8 6 2 .5 4 100 O C Avalanche Energy with Single Pulse IAS=1.4A, VDD=50V, L=10mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance www.DataSheet4U.com Note: 1. Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPROVE PRO...