BI-DIRECTIONAL ESD PROTECTION DIODE
PJSD05CTS
BI-DIRECTIONAL ESD PROTECTION DIODE
This Penta has been designed to Protect Sensitive Equipment against ESD an...
Description
PJSD05CTS
BI-DIRECTIONAL ESD PROTECTION DIODE
This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to data line where the board space is a premium.
SPECIFICATION FEATURES
100W Power Dippsipation (8/20µs Waveform) Low Leakage Current,Maximum of 0.5µA@5Vdc Very low Clamping voltage IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance In compliance with EU RoHS 2002/95/EC directivess
APPLICATIONS
Video I/O ports protection Set Top Boxes Portable Instrumentation Case : SOD-523 plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight : 0.0014 grams Marking : RS
1
2
Fig.130
MAXIMUM RATINGS
Rating Peak Pulse Power (8/20 µs Waveform) Peak Pulse Current (8/20 µs Waveform) ESD Voltage (HBM) O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Symbol Value 100 5.0 >25 -55 to 150 Units W A kV
O
PPP I PP V ESD
T J , T S TG
C
ELECTRICAL CHARACTERISTICS (TA=25oC)
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol VWRM VBR IR VC VC CJ CJ I BR=1mA VR=3.5V I PP=1A I PP=4A 0 Vdc Bias f=1MHz 5 Vdc Bias f=1MHz Conditions Min. 5.78 Typ. Max. 5.0 7.82 0.5 12 15 30 25 Units V V µA V V pF pF
www.DataSheet4U.com Reverse Leakage Current
Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance
REV.0.4-FEB.25.2...
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