PJSD05CTM

PJSD05CTM BI-DIRECTIONAL ESD PROTECTION DIODE This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to data line where the board space is a premium. SPECIFICATION FEATURES 100W Power Dippsipation (8/20µs Waveform) Low Leakage Current,Maximum of 1µA@5Vdc Very low Clamping voltage IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance 0.026(0.65) 0.021(0.55) 0.034(0.85) 0.029(0.75) SO D -92 3 In compliance with EU RoHS 2002/95/EC directivess 0.010(0.25) APPLICATIONS Video I/O ports protection Set Top Boxes Portable Instrumentation Case : SOD-923, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0004gram Marking : H 0.042(1.05) 0.037(0.95) 0.005(0.15) 0.018(0.45) 0.013(0.35) MAXIMUM RATINGS Rating Peak Pulse Power (8/20 µs Waveform) Maximum Peak Pulse Current (8/20 µs Waveform) ESD Voltage (HBM) O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Symbol Value 100 5.0 >25 -55 to 125 0.007(0.18) 0.003(0.08) Units W A kV O PPP I PP V ESD T J , T S TG C ELECTRICAL CHARACTERISTICS (TA=25oC) Parameter Reverse Stand-Off Voltage Symbol VWRM VBR IR VC CJ Conditions Min. - Typ. - Max. 5.0 7.82 1.0 12.5 30 Units V V µA V pF www.DataSheet4U.com Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Off State Junction Capaci...