PJSD05CTG

PJSD05CTG BI-DIRECTIONAL ESD PROTECTION DIODE This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to data line where the board space is a premium. SPECIFICATION FEATURES 100W Power Dippsipation (8/20µs Waveform) Low Leakage Current,Maximum of 0.5µA@5Vdc Very low Clamping voltage IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance In compliance with EU RoHS 2002/95/EC directivess APPLICATIONS Video I/O ports protection Set Top Boxes Portable Instrumentation Case : SOD-723, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0007gram Marking : RB MAXIMUM RATINGS Rating Peak Pulse Power (8/20 µs Waveform) Peak Pulse Current (8/20 µs Waveform) ESD Voltage (HBM) O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Symbol Value 1 00 5.0 >25 -55 to 150 Units W A kV O PPP I PP V ESD T J , T S TG C ELECTRICAL CHARACTERISTICS (TA=25oC) Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current www.DataSheet4U.com Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR VC VC CJ CJ Conditions Min. - Typ. - Max. 5.0 7.82 0.5 12 15 30 25 Units V V µA V V pF pF I BR=1mA VR=3.5V I PP=1A I PP=4A 0 Vdc Bias f=1MHz 5 Vdc Bias f=1MHz 5.78 - REV.0.5-FE...