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PJSD36TG

Pan Jit International

SINGLE LINE TVS DIODE

PJSD03TG~PJSD36TG SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 100 Watts peak pules ...


Pan Jit International

PJSD36TG

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Description
PJSD03TG~PJSD36TG SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES 100 Watts peak pules power( tp=8/20µs) Small package for use in portable electronics Suitable replacement for MLV’S in ESD protection applications Low clamping voltage and leakage current In compliance with EU RoHS 2002/95/EC directives 3~36 Volts POWER 100 Watts APPLICATIONS Case: SOD-723 plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx.Weight : 0.00077 gram Marking : PJSD03TG : FS PJSD05TG : FT PJSD08TG : FU PJSD12TG : FV PJSD15TG : FW PJSD24TG : FX PJSD36TG : FY MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 µs) ESD Voltage Operating Temperature Storage Temperature ELECTRICAL CHARA CTERISTICS Symbol Value 100 25 -50 to 150 -50 to 150 Units W KV O P PK V ESD TJ TSTG C C O PJSD03TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Symbol VRWM V BR IR VC CJ CJ Conditions IBR=1mA VR=3.3V IPP=10A 0Vdc Bias=f=1MHz 3Vdc Bias=f=1MHz Min. 4 Typical 180 100 Max. 3.3 125 7.5 Units V V µA V pF pF www.DataSheet4U.com Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance REV.0.1-FEB.16.2009 PAGE . 1 PJSD03TG~PJSD36TG PJSD05TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R ...




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