SINGLE LINE LOW CAPACITIANCE TVS DIODE
PJSD03LCTS~PJSD05LCTS
SINGLE LINE LOW CAPACITIANCE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• ...
Description
PJSD03LCTS~PJSD05LCTS
SINGLE LINE LOW CAPACITIANCE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
120 Watts peak pules power( tp=8/20µs) Small package for use in portable electronics Suitable replacement for MLV’S in ESD protection applications Low clamping voltage and leakage current In compliance with EU RoHS 2002/95/EC directives
3~5 Volts
POWER
120 Watts
APPLICATIONS
Case: SOD-523 plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.0014 grams Marking : PJSD03LCTS : PL PJSD05LCTS : PM
1
2
Fig.139
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating Peak Pulse Power (tp=8/20 µs) ESD Voltage Operating Temperature Storage Temperature
Symbol
Value 120 25 -55 to 150 -55 to 150
Units W KV
O
P PK V ESD TJ TSTG
C C
O
ELECTRICAL CHARA CTERISTICS
PJSD03LCTS Parameter Reverse Stand-Off Voltage www.DataSheet4U.com Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Symbol VRWM V BR IR VC CJ Conditions I BR=1mA VR=3.3V I PP=5A 0Vdc Bias=f=1MHz Min. 4 Typical 4.9 9.5 0.5 Max. 3.3 100 11 3 Units V V µA V pF
REV.0.3-DEC.23.2009
PAGE . 1
PJSD03LCTS~PJSD05LCTS
PJSD05LCTS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Symbol VRWM V BR IR VC CJ Conditions I BR=1mA VR=5V I PP=5A 0Vdc Bias=f=1MHz Min. 6.0 Typical 6.7 11 0.5 Max. 5 20 13 3 Uni...
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