PJSD03LCFN2

PJSD03LCFN2 BI-DIRECTIONAL ESD PROTECTION DIODE This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 3.3Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium. SPECIFICATION FEATURES 40W Power Dissipation (8/20μs Waveform) Low Leakage Current, Maximum of 2.5μ[email protected] Very low Clamping voltage IEC 61000-4-2 ESD 30kV air, 30kV Contact Compliance In compliance with EU RoHS 2002/95/EC directives Terminals : Solderable per MIL-STD-750, Method 2026 Case : DFN 2L, Plastic Marking : BS 0.022(0.55) 0.017(0.45) 0.002(0.05)MAX. 0.042(1.05) 0.037(0.95) APPLICATIONS Video I/O ports protection Set Top Boxes Portable Instrumentation 0.013(0.32) 0.008(0.22) 0.026(0.65) 0.021(0.55) PIN NO.1 IDENTIFICATION MAXIMUM RATINGS Rating Peak Pulse Power (8/20 μs Waveform) Peak Pulse Current (8/20 μs Waveform) O p e ra t i ng J unc t i o n a nd S t o ra g e Te m p e r a tur e Ra ng e Symbol Value 40 6 -55 to +150 Units W A O PPP I PPM T J , T S TG 0.022(0.55) 0.047(0.45) C ELECTRICAL CHARACTERISTICS (TJ=25oC) Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current www.DataSheet4U.com Clamping Voltage (8/20μs) Off State Junction Capacitance Symbol VWRM VBR IR VC CJ I BR=1mA VR=3.3V I PP =6A 0 Vdc Bias f=1MHz Conditions Min. 5.4 Typ. Max. 3.3 7.0 2.5 10 25 Units V V μA V pF PAN JIT RESERVES THE...