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PJP730

Pan Jit International

400V N-Channel Enhancement Mode MOSFET

PJP730 / PJF730 400V N-Channel Enhancement Mode MOSFET FEATURES • 5.5A , 400V, RDS(ON)=0.95Ω@VGS=10V, ID=3.0A • • • • • ...


Pan Jit International

PJP730

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PJP730 / PJF730 400V N-Channel Enhancement Mode MOSFET FEATURES 5.5A , 400V, RDS(ON)=0.95Ω@VGS=10V, ID=3.0A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP730 PJF730 MARKING P730 F730 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA PJP730 400 +3 0 5 .5 22 87 0 .7 PJF730 Uni ts V V 5 .5 22 50 0 .4 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 303 1 .4 3 6 2 .5 2 .5 100 O C Avalanche Energy with Single Pulse IAS=5.7A, VDD=50V, L=16.5mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance www.DataSheet4U.com Note: 1. Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPR...




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