Document
PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
1
2 G
3 D
S
1
2 G
3 S D
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP2N60 PJF2N60
MARKING
P2N60 F2N60
PACKAGE
TO-220AB ITO-220AB
PACKING
Gate
50PCS/TUBE 50PCS/TUBE
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA
P J P 2 N6 0 600 +3 0 2 8 45 0 .3 6
P J F 2 N6 0
Uni ts V V
2 8 20 0 .1 6
A A W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0 120 2 .7 8 6 2 .5 6 .2 5 100
O
C
Avalanche Energy with Single Pulse
IAS=2.0A, VDD=50V, L=56mH
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
O
Note : 1. Maximum DC current limited by the package www.DataSheet4U.com
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009 PAGE . 1
PJP2N60 / PJF2N60
ELECTRICAL CHARACTERISTICS
( TA=25OC unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V D SS V GS (th) R D S (o n) I DSS I GS S
V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 1A VDS=600V, VGS=0V V GS =+3 0 V, V D S =0 V
600 2 .0 -
4.0 -
4 .0 4.6 10 +1 0 0
V V Ω uA nΑ
Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q
gd
-
9 .3 2 .0 3.3 10.8 10.4 2 3 .6 1 6 .2 320 30 3
13 18 16 ns 32 22 380 45 5.6 pF nC
V D S =4 8 0 V, I D =2 A V GS =1 0 V
-
t d (o n) tr t d (o ff) tf C C C
i ss
VDD=300V , I D =2A VGS=10V, RG=25Ω
-
o ss
V D S =2 5 V, V GS =0 V f=1 .0 MH Z
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS I SM V SD t rr Q
rr
IS =2 A , V GS =0 V V GS =0 V, IF =2 A d i /d t=1 0 0 A /us
-
230 1 .0
2 .0 8 .0 1 .4 -
A A V ns uC
Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me.