PJP12N65

PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1 D G 3S 12D G MECHANICAL DATA Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION 1 TYPE PJP12N65 PJF12N65 MARKING P12N65 F12N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 1 2 N6 5 P J F 1 2 N6 5 Uni ts V V 650 +3 0 12 48 175 1 .4 12 48 52 0 .4 2 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 990 0 .7 6 2 .5 2 .4 100 O C Avalanche Energy with Single Pulse IAS=12A, VDD=90V, L=12mΗ mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance O Note : 1. Maximum DC current limited by the package www.DataSheet4U.com PAN JIT RESERVE...