650V N-Channel Enhancement Mode MOSFET
PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • ...
Description
PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
3S 2 1 D G
3S 12D G
MECHANICAL DATA
Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM 2 Drain
ORDERING INFORMATION
1
TYPE
PJP10N65 PJF10N65
MARKING
P10N65 F10N65
PACKAGE
TO-220AB ITO-220AB
PACKING
50PCS/TUBE 50PCS/TUBE
Gate 3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA
P J P 1 0 N6 5
P J F 1 0 N6 5
Uni ts V V
650 +3 0 10 40 156 1 .2 5 10 40 50 0 .4
A A W
O
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
-5 5 to +1 5 0 750 0 .8 6 2 .5 2 .5 100
O
C
Avalanche Energy with Single Pulse
IAS=10A, VDD=90V, L=13mΗ
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
O
Note : 1. Maximum DC current limited by the package www.DataSheet4U.com
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