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PJ4N3KDW

Pan Jit International
Part Number PJ4N3KDW
Manufacturer Pan Jit International
Description 30V Dual N-Channel MOSFET
Published Feb 26, 2011
Detailed Description PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON),...
Datasheet PDF File PJ4N3KDW PDF File

PJ4N3KDW
PJ4N3KDW

Overview
PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@2.
5V,IDS@1mA=7.
0Ω • RDS(ON), VGS@4.
0V,IDS@10mA=5.
0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference • Mounting cost and area can be cut in half • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems,Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Low voltage drive (2.
5V) makes this device ideal for portable equipment • ESD Protected 2KV HBM • In compliance with EU RoHS 2002/95/EC directives 6 5 4 MECHANICAL DATA • Case: SOT...


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