PJ4812
30V N-Channel Enhancement Mode MOSFET
SOIC-08
FEATURES
RDS(ON), VGS@10V,IDS@8A=17mΩ RDS(ON), VGS@5.0V,IDS@6A=34mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above can meet RoHS e...
