PJ4800

PJ4800 30V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES RDS(ON), VGS@10V,IDS@8A=20mΩ RDS(ON), [email protected],IDS@6A=31mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA Case: SOIC-08 Package Terminals : Solderable per MIL-STD-750D,Method 1036.3 Marking : 4800 PIN Assignment 8 7 6 5 1 2 3 4 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.1mH,I D=8A,VDD=25V Power Dissipation TC=25oC TC=75oC TC=25oC SYMBOL VDS VGS ID I DM EAS PD TJ,TSTG RΘJA VALUE 30 +20 8 32 3.2 3 2 -55 to +175 50 UNIT V V A A mJ W Operating Junction and Stroage Temperature Range Junction-to-Ambient Thermal Resistance(PCB Mounted)2 www.DataSheet4U.com Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec o C o C/W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE December 01.2009-REV.00 PAGE . 1 PJ4800 ELECTRICAL CHARACTERISTICS (Tc=25oC,Unless Otherwise Noted ) PA RA M E TE R S YM B O L T E S T C O N D IT IO N S M IN . T YP. MAX. U N IT S...