AWT6302

AWT6302 PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES InGaP HBT Technology High Efficiency: 40% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.8 V (+2.7 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.1mm CDMA 1XRTT, 1xEV-DO Compliant Pinout Enables Easy Phone Board Migration From 4mm x 4mm Package APPLICATIONS PCS CDMA Wireless Handsets Dual Band CDMA Wireless Handsets M9 Package 8 Pin 3mm x 3mm Surface Mount Module PRODUCT DESCRIPTION The AWT6302 meets the increasing demands for higher efficiency and linearity in CDMA 1X handsets, while reducing pcb area by 44%. The package pinout was chosen to enable handset manufacturers to switch from a 4mm x 4mm PA module with very few layout changes to the phone board. The PA module is optimized for VREF = +2.8 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 3mm x 3mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GND at slug (pad) VCC 1 8 VCC www.DataShee...