NST847BF3T5G

NST847BF3T5G NPN General Purpose Transistor The NST847BF3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER NST847BF3T5G Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit Vdc Vdc Vdc mAdc 1 2 3 hFE, 200−450 Low VCE(sat), ≤ 0.25 V Reduces Board Space This is a Pb−Free Device MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead 3 Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RYJL (Note 2) TJ, Tstg Max 290 2.3 432 347 2.8 360 143 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C/W °C SOT−1123 CASE 524AA STYLE 1 MARKING DIAGRAM 4M 4 M = Device Code = Date Code ORDERING INFORMATION Device NST847BF3T5G Package Shipping† Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is...