NSS20101J

NSS20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max 20 40 6.0 1.0 2.0 Unit Vdc Vdc Vdc A A 3 2 http://onsemi.com 20 VOLTS, 1.0 AMPS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER MARKING DIAGRAM & PIN ASSIGNMENT 3 Collector xx M G G 1 Base 2 Emitter HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Diss...