High-Speed Switching Diode
NSD914F3T5G High-Speed Switching Diode
The NSD914F3T5G device is a spin−off of our popular SOT−23 three−leaded device. I...
Description
NSD914F3T5G High-Speed Switching Diode
The NSD914F3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for high speed switching applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium.
Features http://onsemi.com
Reduces Board Space This is a Halide−Free Device This is a Pb−Free Device
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc
3 CATHODE
1 ANODE NSD914F3T5G
3 1 2
SOT−1123 CASE 524AA STYLE 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead 3 Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RYJL (Note 2) TJ, Tstg Max 290 2.3 432 347 2.8 360 143 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C/W °C R M
MARKING DIAGRAM
RM = Device Code = Date Code
ORDERING INFORMATION
Device NSD914F3T5G Package Shipping† SOT−1123 8000/Tape & Reel (Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operatin...
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