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KV1911A

Microsemi Corporation

UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES

TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varact...


Microsemi Corporation

KV1911A

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Description
TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage with high ratio tuning. They feature grown junction mesa technology for the highest Q commercially available. Passivation is our dense mil spec silicon dioxide for the lowest 1/F noise and low leakage even at temperature extremes. They are available in a wide range of package styles including chip (style 00) and most other conventional ceramic microwave packages. When ordering, specify the desired case style by adding its number as a suffix to the basic model number. For more details on surface mount Super Hyperabrupt Varactors see the Surface Mount Devices section. APPLICATIONS Low voltage / battery powered equipment from UHF through Ku band including: Wide bandwidth VCO’s Voltage Tunable Filters Phase Shifters Modulators VCXO’s RATINGS: Minimum Voltage Breakdown: 12 V @ 10 µA Maximum Leakage Current: Junction Operating Temp.: Storage Temp.: 50 nA @ 10 V / 25°C -55°C to +125°C -65°C to +200°C ELECTRICAL SPECIFICATIONS: TA=25°C MODEL KV1911A KV1951A KV1921A KV1931A KV1941A KV1961A KV1971A KV1981A KV1991A CJ @ 1 V (pF) >36.00 >26.00 >17.00 >13.00 > 9.00 > 3.80 > 1.65 > 1.20 > 0.60 CJ @ 2.5 V (pF) 18 - 27 13 - 20 8.3 - 12.8 6.3 - 9.8 4.3 - 6.3 1.8 - 2.8 0.9 - 1.35 0.6 - 0.9 0.3 - 0.6 CJ @ 4 V (pF) <11.80 < 8.80 < 5.80 < 4.30 < 2.80 < 1.30 < 0.60 < 0.45 < 0.25 CJ @ 8 V (pF) <6.00 <4.50 <3.00 <2.50 <1.50 <0.80 <0.35 <0...




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